US 12,444,607 B2
Apparatus and method for wafer bonding
Yeong-Jyh Lin, Nantou County (TW); Yeur-Luen Tu, Taichung (TW); and Chin-Wei Liang, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on May 26, 2022, as Appl. No. 17/826,097.
Application 16/859,129 is a division of application No. 14/996,981, filed on Jan. 15, 2016, granted, now 10,636,661, issued on Apr. 28, 2020.
Application 17/826,097 is a continuation of application No. 16/859,129, filed on Apr. 27, 2020, granted, now 11,348,790.
Prior Publication US 2022/0285156 A1, Sep. 8, 2022
Int. Cl. H01L 21/18 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); H01L 25/00 (2006.01)
CPC H01L 21/187 (2013.01) [H01L 21/02046 (2013.01); H01L 21/02068 (2013.01); H01L 21/67196 (2013.01); H01L 25/00 (2013.01); H01L 21/67092 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A plasma module, comprising:
a first chamber, configured to accommodate a semiconductor wafer;
a heating stage, located in the first chamber, the heating stage configured to selectively control an operating temperature, at which an operation is performed by the plasma module in the first chamber, to reach a first temperature within a predetermined temperature range in response to a type of the operation performed by the plasma module, and each value in the predetermined temperature range is greater than a value of a room temperature;
wherein when a first type of plasma comprising Cl2 plasma is applied to the first chamber, the plasma module is configured to perform a sidewall cleaning operation at the first temperature to clean a sidewall of the first chamber; when a second type of plasma different from the first type of plasma is applied to the first chamber, the plasma module is configured to perform a plasma operation to activate a surface of the semiconductor wafer; and
a second chamber formed with chamber walls horizontally separated from the first chamber by an input, and a power source located in the second chamber ionizing a gas to generate a third type of plasma different from the first type of plasma, wherein the third type of plasma is transferred from the second chamber to the first chamber through the input to perform a reduction operation upon the surface of the semiconductor wafer.