US 12,444,605 B2
Epitaxial methods including a haloborane formula for growing boron-containing structures having increased boron concentrations
Xuebin Li, Sunnyvale, CA (US); Sathya Chary, San Francisco, CA (US); and Joe Margetis, Gilbert, AZ (US)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jan. 12, 2022, as Appl. No. 17/573,748.
Prior Publication US 2023/0223257 A1, Jul. 13, 2023
Int. Cl. C30B 25/18 (2006.01); C23C 16/02 (2006.01); C23C 16/38 (2006.01); C30B 29/10 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/02579 (2013.01) [C23C 16/0236 (2013.01); C23C 16/38 (2013.01); C30B 25/186 (2013.01); C30B 29/10 (2013.01); H01L 21/02532 (2013.01); H01L 21/0262 (2013.01); H01L 21/02636 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method of depositing a structure comprising boron and a Group IV element on a substrate, the method comprising:
positioning the substrate within a substrate processing chamber, the substrate having a dielectric material and a crystalline material formed thereon, the crystalline material comprising a Group IV element;
heating the substrate to a temperature of 300° C. or more;
flowing a first process gas and a second process gas into the substrate processing chamber, wherein:
the first process gas flows at a flow rate within a range of 1 sccm to 100 sccm, the first process gas comprising a boron-containing gas, and the boron-containing gas consisting of boron trichloride (BCl3);
the second process gas comprises at least one Group IV element-containing gas; and
exposing the substrate to the first process gas and the second process gas to epitaxially and selectively deposit the structure comprising boron and the Group IV element on the crystalline material at a growth rate of 100 Å/min or more, the structure having a boron concentration of 5×1020 atoms/cm3 or more, wherein the first process gas is flown into the substrate processing chamber and is exposed to the substrate prior to flowing the second process gas into the substrate processing chamber.