US 12,444,604 B2
Vapor phase epitaxy method
Clemens Waechter, Lauffen am Neckar (DE); Gregor Keller, Heilbronn (DE); Thorsten Wierzkowski, Heilbronn (DE); and Daniel Fuhrmann, Heilbronn (DE)
Filed by AZUR SPACE SOLAR POWER GMBH, Heilbronn (DE)
Filed on Dec. 21, 2020, as Appl. No. 17/129,732.
Claims priority of application No. 10 2019 008 927.8 (DE), filed on Dec. 20, 2019.
Prior Publication US 2021/0193463 A1, Jun. 24, 2021
Int. Cl. H01L 21/02 (2006.01); C23C 16/30 (2006.01); C30B 25/14 (2006.01); C30B 29/42 (2006.01); H10D 62/10 (2025.01)
CPC H01L 21/02576 (2013.01) [C23C 16/301 (2013.01); C30B 25/14 (2013.01); C30B 29/42 (2013.01); H01L 21/02546 (2013.01); H01L 21/02579 (2013.01); H01L 21/0262 (2013.01); H10D 62/10 (2025.01)] 17 Claims
OG exemplary drawing
 
1. A vapor phase epitaxy method comprising:
growing a Ill-V layer with a doping profile that changes from n-doping to p-doping on a surface of a substrate or a preceding layer in a reaction chamber from a vapor phase from an epitaxial gas flow comprising a carrier gas, at least one first precursor for an element from main group III, and at least one second precursor for an element from main group V;
setting, when a first growth height is reached, an initial n-doping level in the epitaxial gas flow via a ratio, leading to a p-doping, of a first mass flow of the first precursor to a second mass flow of the second precursor and with an addition of a third mass flow of a third precursor for an n-type dopant to the epitaxial gas flow; and
changing the third mass flow and/or the ratio between the first and second mass flow stepwise or continuously over a junction region layer with a growth height of at least 10 μm until a target p-doping level is reached.