US 12,444,602 B2
Semiconductor device structure and methods of forming the same
Wan-Yi Kao, Hsinchu (TW); Chunyao Wang, Hsinchu (TW); and Yung-Cheng Lu, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on May 25, 2022, as Appl. No. 17/824,129.
Claims priority of provisional application 63/278,805, filed on Nov. 12, 2021.
Prior Publication US 2023/0154746 A1, May 18, 2023
Int. Cl. H01L 21/02 (2006.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01)
CPC H01L 21/0228 (2013.01) [H01L 21/02126 (2013.01); H01L 21/02211 (2013.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a dielectric layer, comprising:
forming an as deposited layer using an atomic layer deposition process, comprising:
flowing a silicon source precursor into a process chamber at a first flow rate;
flowing a carbon and nitrogen source precursor into the process chamber at a second flow rate; and
flowing an oxygen source precursor into the process chamber at a third flow rate, wherein a ratio of the first flow rate to the second flow rate to the third flow rate ranges between about one to one to eight and one to one to twelve, and wherein the as deposited layer has a carbon concentration substantially greater than a nitrogen concentration; and
annealing the as deposited layer in an environment including H2O to form the dielectric layer, wherein the dielectric layer has a ratio of carbon concentration to nitrogen concentration ranging from about two to one to about ten to one.