US 12,444,599 B2
Method for forming an ultraviolet radiation responsive metal oxide-containing film
Hannu Huotari, Espoo (FI); and Jan Willem Maes, Wilrijk (BE)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Dec. 8, 2021, as Appl. No. 17/545,047.
Application 17/545,047 is a division of application No. 16/206,589, filed on Nov. 30, 2018, granted, now 11,217,444.
Prior Publication US 2022/0102140 A1, Mar. 31, 2022
Int. Cl. H01L 21/02 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01); H01L 21/033 (2006.01); H01L 21/3213 (2006.01)
CPC H01L 21/02175 (2013.01) [C23C 16/40 (2013.01); C23C 16/45553 (2013.01); C23C 16/56 (2013.01); H01L 21/0228 (2013.01); H01L 21/02348 (2013.01); H01L 21/0337 (2013.01); H01L 21/32139 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method including forming and irradiating an ultraviolet (UV) radiation responsive metal containing film, the method comprising:
depositing an UV radiation responsive metal containing film over a substrate, the UV radiation responsive metal containing film having a substantially uniform etch rate, wherein depositing comprises:
heating the substrate to a deposition temperature of less than 200° C.;
contacting the substrate with a first vapor phase reactant comprising a metal component, a hydrogen component, and a carbon component; and
contacting the substrate with a second vapor phase reactant organic precursor;
irradiating select portions of the UV radiation responsive metal containing film with UV radiation thereby forming a metal containing film with irradiated portions having a first etch rate and non-irradiated portions having a second etch rate different from the first etch rate; and
selectively etching one of the irradiated portions having the first etch rate or the non-irradiated portions having a second etch rate,
wherein the UV radiation responsive metal containing film comprises a hybrid material including an organic component and an inorganic component.