US 12,444,597 B2
Epitaxial wafer cleaning method
Norimichi Tanaka, Annaka (JP); Hisashi Masumura, Yabuki-machi (JP); Teppei Nakata, Takasaki (JP); and Yuhei Fukazu, Takasaki (JP)
Assigned to SHIN-ETSU HANDOTAI CO., LTD., Tokyo (JP)
Appl. No. 18/028,244
Filed by SHIN-ETSU HANDOTAI CO., LTD., Tokyo (JP)
PCT Filed Sep. 13, 2021, PCT No. PCT/JP2021/033609
§ 371(c)(1), (2) Date Mar. 24, 2023,
PCT Pub. No. WO2022/091609, PCT Pub. Date May 5, 2022.
Claims priority of application No. 2020-180466 (JP), filed on Oct. 28, 2020.
Prior Publication US 2023/0411143 A1, Dec. 21, 2023
Int. Cl. H01L 21/02 (2006.01); C30B 25/20 (2006.01); C30B 33/00 (2006.01); H01L 21/67 (2006.01)
CPC H01L 21/0209 (2013.01) [C30B 33/00 (2013.01); H01L 21/02057 (2013.01); H01L 21/02087 (2013.01); H01L 21/67046 (2013.01); C30B 25/20 (2013.01); H01L 21/67051 (2013.01)] 6 Claims
OG exemplary drawing
 
1. An epitaxial wafer cleaning method comprised of cleaning steps for cleaning a wafer having an epitaxial film formed on a front surface thereof, the cleaning steps consisting of:
a first cleaning step of supplying a cleaning solution containing O3 to all surfaces, including the front surface, a back surface, and an end surface, of the wafer to perform spin cleaning;
a second cleaning step of supplying a cleaning solution to the front surface, the back surface and the end surface of the wafer while only the back surface and the end surface are being cleaned with roll brushes, after the first cleaning step;
a third cleaning step, performed after the second cleaning step, of supplying a cleaning solution containing O3 to the front surface of the wafer to perform spin cleaning; and
a fourth cleaning step of supplying a cleaning solution containing HF to the front surface of the wafer to perform spin cleaning after the third cleaning step, wherein after the second cleaning step, the third cleaning step is optionally performed a plurality of times, each time together with and followed by the fourth cleaning step; and
optionally, after a final one of the fourth cleaning step, a fifth cleaning step of supplying a cleaning solution containing O3 to the front surface of the wafer to perform spin cleaning.