US 12,444,595 B2
Ion sources for improved robustness
Scott T. Quarmby, Round Rock, TX (US); and Edward McCauley, Cedar Park, TX (US)
Assigned to Thermo Finnigan LLC, San Jose, CA (US)
Filed by Thermo Finnigan LLC, San Jose, CA (US)
Filed on Oct. 28, 2022, as Appl. No. 18/050,532.
Prior Publication US 2024/0145228 A1, May 2, 2024
Int. Cl. H01J 49/24 (2006.01); C23C 14/06 (2006.01); C23C 14/14 (2006.01); H01J 49/10 (2006.01)
CPC H01J 49/24 (2013.01) [C23C 14/0641 (2013.01); C23C 14/14 (2013.01); H01J 49/10 (2013.01)] 26 Claims
OG exemplary drawing
 
1. A method comprising:
ionizing a sample using an ion source and analyze the sample using a mass analyzer;
raising the pressure in the ion source to a sputtering pressure by supplying a flow of a sputtering gas and either reducing a speed of a high vacuum pump or isolating the ion source from the high vacuum pump;
sputtering a conductive material on a surface of the ion source;
reducing the pressure in the ion source to an operating pressure by reducing the flow of the sputtering gas and either increasing the speed of the high vacuum pump or restoring connectivity between the ion source and the high vacuum pump; and
ionizing a second sample using the ion source and analyze the second sample using the mass analyzer.