	US 12,444,589 B2
	Operation method of etching apparatus and method of manufacturing semiconductor device using the same
Dooyoung Gwak, Suwon-si (KR); Soonam Park, Suwon-si (KR); Janggyoo Yang, Suwon-si (KR); Myungsun Choi, Suwon-si (KR); and Jaemin Ha, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Mar. 17, 2023, as Appl. No. 18/123,068.
Claims priority of application No. 10-2022-0037503 (KR), filed on Mar. 25, 2022.
Prior Publication US 2023/0307217 A1, Sep. 28, 2023
Int. Cl. H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/66 (2006.01)

CPC H01J 37/32862 (2013.01) [H01J 37/32743 (2013.01); H01J 37/32788 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 22/10 (2013.01); H01J 2237/24485 (2013.01); H01J 2237/3343 (2013.01)]

20 Claims

1. An operation method of an etching apparatus, the operation method comprising:

transferring, from a load lock chamber to a process chamber, a substrate on which an etching target layer is formed;

first etching the etching target layer on the substrate in a first etching time;

transferring the substrate to a storage location in a vacuum state;

intermediate cleaning the process chamber in a first cleaning time;

transferring the substrate from the storage location to the process chamber;

second etching the etching target layer on the substrate in a second etching time; and

returning the substrate to the load lock chamber,

wherein the etching target layer is formed in an etching pattern by the first etching and the second etching.

16. A method of manufacturing a semiconductor device, the method comprising:

forming an etching target layer on a substrate;

forming a mask pattern on the etching target layer;

forming an etching pattern by etching the etching target layer using the mask pattern as an etching mask; and

removing the mask pattern,

wherein the forming the etching pattern comprises:

transferring the substrate from a load lock chamber to a process chamber;

first etching the etching target layer on the substrate in a first etching time;

transferring the substrate to a storage location in a state in a vacuum state;

intermediate cleaning the process chamber in a first cleaning time;

transferring the substrate from the storage location to the process chamber;

second etching the etching target layer on the substrate in a second etching time; and

returning the substrate to the load lock chamber, and

wherein the intermediate cleaning, the transferring of the substrate from the storage location to the process chamber, and the second etching are repeated at least once until the etching target layer is etched in the etching pattern.