	US 12,444,588 B2
	Method and apparatus for processing wafers
Ming Li, Fremont, CA (US); Benson Quyen Tong, San Jose, CA (US); and Chander Radhakrishnan, Pleasanton, CA (US)
Assigned to Lam Research Corporation, Fremont, CA (US)
Appl. No. 17/253,356
Filed by Lam Research Corporation, Fremont, CA (US)
PCT Filed Jun. 6, 2019, PCT No. PCT/US2019/035717 § 371(c)(1), (2) Date Dec. 17, 2020, PCT Pub. No. WO2020/005491, PCT Pub. Date Jan. 2, 2020.
Claims priority of provisional application 62/691,922, filed on Jun. 29, 2018.
Prior Publication US 2021/0265136 A1, Aug. 26, 2021
Int. Cl. H01J 37/32 (2006.01); C23C 16/455 (2006.01); H01L 21/67 (2006.01)

CPC H01J 37/32834 (2013.01) [C23C 16/45565 (2013.01); H01J 37/32449 (2013.01); H01J 37/32862 (2013.01); H01L 21/67069 (2013.01); H01J 37/32091 (2013.01); H01J 37/32633 (2013.01); H01J 37/32642 (2013.01); H01J 37/32697 (2013.01)]

6 Claims

1. An apparatus for providing plasma processing of a substrate, comprising:

plasma processing chamber with a plasma zone;

a first turbopump with an inlet in fluid connection with the plasma processing chamber and an exhaust;

a gas source for providing gas to the plasma processing chamber;

at least one gas line connected to the gas source and the plasma processing chamber, wherein the at least one gas line is connected to the plasma processing chamber on a first side of the plasma zone so that gas provided by the at least one gas line is provided on the first side of a plasma zone above the substrate so that gas from the at least one gas line passes through the plasma zone;

at least one bleed line connected to the at least one gas line, wherein the at least one bleed line is connected to the plasma processing chamber below the substrate so that gas provided by the at least one bleed line passes into the plasma processing chamber below the substrate and flows to the inlet of the first turbopump without passing through the plasma zone of the plasma processing chamber;

at least one gas line valve on the at least one gas line located between where the at least one bleed line is connected to the at least one gas line and the plasma processing chamber;

at least one bypass valve on the at least one bleed line;

a dry pump with an inlet in fluid connection to the exhaust of the first turbopump, wherein the at least one bleed line is in fluid connection with the dry pump;

at least one pump out valve connected between the at least one bleed line and the dry pump; and

a controller controllably connected to the at least one gas line valve and the at least one bypass valve, and the gas source, wherein the controller comprises:

at least one processor; and

non-transitory computer readable media, comprising computer code for providing a plurality of cycles, wherein each cycle comprises:

opening the at least one gas line valve and closing the at least one bypass valve;

transferring a first wafer into the plasma processing chamber;

etching an etch layer on the first wafer in the plasma processing chamber;

removing the first wafer from the plasma processing chamber;

providing a waferless clean of the plasma processing chamber; and

purging gas in the at least one gas line via the at least one bleed line after providing the waferless clean, wherein the purging passes gas from the at least one gas line into the plasma processing chamber below the substrate so that gas provided by the at least one bleed line passes into the plasma processing chamber below the substrate and flows to the inlet of the first turbopump without passing through the plasma zone.