| CPC H01J 37/32697 (2013.01) [H01J 37/32532 (2013.01); H01J 37/32642 (2013.01); H01J 37/32706 (2013.01)] | 14 Claims |

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1. A plasma processing apparatus comprising:
a substrate support on which a substrate serving as a plasma treatment target is placed and a ring member is positioned to surround the substrate support;
a first and a second electrodes disposed in the substrate support at a position corresponding to the ring member;
a power supply that applies a voltage to the first and the second electrodes during a set of plasma treatment and post-treatment; and
controller configured to control a pair of the set of plasma treatment and post-treatment for a first substrate and the set of plasma treatment and post-treatment for a second substrate, as one processing cycle,
wherein the controller is configured to control the power supply to apply a first voltage to the first electrode and a second voltage to the second electrode, during performing a first plasma treatment for the first substrate, the second voltage having different polarity from the first voltage,
wherein, subsequent to the first plasma treatment for the first substrate, the controller is configured to control the power supply to apply the second voltage to the first electrode and the first voltage to the second electrode, during performing a first post-treatment for the first substrate,
wherein, subsequent to the first post-treatment for the first substrate, the controller is configured to control the power supply to apply the second voltage to the first electrode and the first voltage to the second electrode, during performing a second plasma treatment for the second substrate, and
wherein, subsequent to the second plasma treatment for the second substrate, the controller is configured to control the power supply to apply the first voltage to the first electrode and the second voltage to the second electrode, during performing a second post-treatment for the second substrate.
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