US 12,444,580 B2
Plasma processing apparatus and method
Chih-Hao Chen, Hsinchu (TW); Chung Chuan Huang, Hsinchu (TW); Yi-Tsang Hsieh, Hsinchu (TW); Yu-Chi Lin, Hsinchu (TW); Cha-Hsin Chao, Taipei (TW); and Che-En Tsai, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 25, 2023, as Appl. No. 18/323,769.
Prior Publication US 2024/0395508 A1, Nov. 28, 2024
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/32642 (2013.01) [H01J 37/32027 (2013.01); H01J 37/32458 (2013.01); H01J 37/32651 (2013.01); H01J 37/32715 (2013.01); H01J 2237/334 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A plasma processing apparatus comprising:
a chamber configured to receive a wafer for an etching process;
a conductive focus ring disposed within the chamber and configured to focus an electric field to control an etch direction of the etching process; and
an insulative cover ring disposed within the chamber, wherein the insulative cover ring is configured to modify the electric field, wherein the insulative cover ring has an inner annular insulative portion and outer annular insulative portion, and wherein a gap is defined between the inner annular insulative portion and the outer annular insulative portion.