US 12,444,579 B2
Mid-ring erosion compensation in substrate processing systems
Hui Ling Han, Alameda, CA (US); and Seetharaman Ramachandran, San Jose, CA (US)
Assigned to LAM RESEARCH CORPORATION, Fremont, CA (US)
Appl. No. 17/913,008
Filed by LAM RESEARCH CORPORATION, Fremont, CA (US)
PCT Filed Mar. 23, 2020, PCT No. PCT/US2020/024333
§ 371(c)(1), (2) Date Sep. 20, 2022,
PCT Pub. No. WO2021/194470, PCT Pub. Date Sep. 30, 2021.
Prior Publication US 2023/0162953 A1, May 25, 2023
Int. Cl. H01J 37/32 (2006.01); H01L 21/687 (2006.01)
CPC H01J 37/32642 (2013.01) [H01J 37/32082 (2013.01); H01L 21/68735 (2013.01); H01J 2237/024 (2013.01); H01J 2237/24578 (2013.01); H01J 2237/24585 (2013.01); H01J 2237/334 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A substrate processing system comprising:
a substrate support assembly to support a semiconductor substrate during processing of the semiconductor substrate in the substrate processing system;
a first edge ring arranged around the substrate support assembly, the first edge ring being movable relative to the substrate support assembly;
a second edge ring arranged around the substrate support assembly and under the first edge ring; and
a controller configured to compensate a height of the first edge ring based on erosion of the first and second edge rings, wherein the controller is configured to:
determine a first number of hours for which the first edge ring is exposed to RF power supplied during the processing of the semiconductor substrate;
determine a first rate at which the first edge ring erodes due to the processing of the semiconductor substrate;
determine a second number of hours for which the second edge ring is exposed to the RF power;
determine a second rate at which the second edge ring erodes due to the processing of the semiconductor substrate and due to a movement of the first edge ring; and
determine a first amount by which to compensate the height of the first edge ring based on the first number of hours and the first rate;
determine a second amount by which to compensate the height of the first edge ring based on the second number of hours and the second rate;
compensate the height of the first edge ring based on the first and second amounts, wherein the compensated height is equal to a sum of the first and second amounts; and
move the first edge ring relative to the substrate support assembly during the processing of the semiconductor substrate according to the compensated height.