US 12,444,578 B2
Method for protecting apparatus from etching substances and method for forming oxide film
Kwang-Ki Kim, Yongin-si (KR); and Bi-O Lim, Yongin-si (KR)
Assigned to TES CO., LTD, Yongin-si (KR)
Appl. No. 18/025,572
Filed by TES CO., LTD, Yongin-si (KR)
PCT Filed Jul. 26, 2021, PCT No. PCT/KR2021/009671
§ 371(c)(1), (2) Date Mar. 9, 2023,
PCT Pub. No. WO2022/055124, PCT Pub. Date Mar. 17, 2022.
Claims priority of application No. 10-2020-0115975 (KR), filed on Sep. 10, 2020.
Prior Publication US 2023/0343562 A1, Oct. 26, 2023
Int. Cl. H01J 37/32 (2006.01); C23C 16/40 (2006.01)
CPC H01J 37/32495 (2013.01) [C23C 16/401 (2013.01); H01J 37/32862 (2013.01); H01J 2237/3321 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A method of protecting an apparatus from an etching material, comprising:
(a) forming a protective layer on an exposed surface of an apparatus;
(b) forming a seasoning layer on the protective layer;
(c) performing a deposition process on a wafer that is inserted into the apparatus in which the protective layer and the seasoning layer are formed, thereby a deposition film being formed on the seasoning layer;
(d) removing the deposition film and the seasoning layer, with a first etching material; and
(e) removing the protective layer, with a second etching material,
wherein in the step (d), the protective layer suppresses contact of the first etching material with the exposed surface of the apparatus, and
wherein an etch rate of the protective layer to the seasoning layer with respect to the first etching material is about ¼ or less.