US 12,444,577 B2
Apparatus and method for processing substrate
Young Eun Jeon, Ulsan (KR); Yun Sang Kim, Gyeonggi-do (KR); Min Sung Jeon, Gyeonggi-do (KR); Ji Heon Kim, Gyeonggi-do (KR); Youngjo Jin, Gyeonggi-do (KR); Jin Hee Hong, Gyeonggi-do (KR); Sung Min Choi, Gyeonggi-do (KR); and Dong Young Jang, Gyeonggi-do (KR)
Assigned to SEMES CO., LTD., Chungcheongnam-do (KR)
Filed by SEMES CO., LTD., Chungcheongnam-do (KR)
Filed on Jul. 15, 2022, as Appl. No. 17/865,395.
Claims priority of application No. 10-2021-0158009 (KR), filed on Nov. 16, 2021.
Prior Publication US 2023/0154730 A1, May 18, 2023
Int. Cl. H01J 37/32 (2006.01); H10B 43/27 (2023.01)
CPC H01J 37/3244 (2013.01) [H01J 37/32522 (2013.01); H10B 43/27 (2023.02); H01J 2237/022 (2013.01); H01J 2237/334 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method for processing a substrate comprising:
providing a substrate including a target layer in a chamber,
forming a first plasma in the chamber by using a first gas containing chlorine to first reform the target layer, wherein the substrate is controlled to a first temperature while forming the first plasma,
forming a second plasma in the chamber by using a second gas containing oxygen to second reform the first reformed target layer, wherein the substrate is controlled to a second temperature while forming the second plasma,
providing a precursor into the chamber to react the second reformed target layer with the precursor, wherein the substrate is controlled to a third temperature while providing the precursor and
removing at least a portion of the target layer by repeating forming the first plasma, forming the second plasma, and providing the precursor,
wherein the first temperature at the forming of the first plasma and the second temperature at the forming the second plasma are the same as each other, and
wherein the third temperature at the providing of the precursor is higher than the first temperature at the forming of the first plasma and the second temperature at the forming the second plasma.