| CPC H01J 37/3244 (2013.01) [H01J 37/32834 (2013.01)] | 16 Claims |
|
1. A substrate treating apparatus comprising:
a process chamber having a reaction space with one or more insulation members exposed to the reaction space;
a substrate support member supporting a substrate at the reaction space, wherein the substrate includes silicon;
a gas supply member selectively supplying a passivation gas and a process gas to the reaction space, wherein the process gas includes a hydrogen;
a plasma source exciting a gas into a plasma; and
a controller,
wherein the controller is configured to control the gas supply member and the plasma source to supply and excite the process gas that reacts with germanium impurities adhered to the substrate including silicon, and
after a substrate to be treated is taken into the reaction space and supported by the support member, the controller is configured to control the gas supply member and the plasma source to perform:
a first step of supplying the passivation gas and the process gas to the reaction space simultaneously; and
a second step of generating a plasma in the reaction space under the condition of stopping a supply of the passivation gas but supplying the process gas,
wherein the process gas is introduced in a state in which the passivation gas remains in the reaction space.
|