US 12,444,575 B2
Plasma processing apparatus
Hitoshi Tamura, Tokyo (JP); and Norihiko Ikeda, Tokyo (JP)
Assigned to Hitachi High-Tech Corporation, Tokyo (JP)
Appl. No. 18/691,299
Filed by Hitachi High-Tech Corporation, Tokyo (JP)
PCT Filed Jul. 24, 2023, PCT No. PCT/JP2023/026919
§ 371(c)(1), (2) Date Mar. 12, 2024,
PCT Pub. No. WO2024/084762, PCT Pub. Date Apr. 25, 2024.
Claims priority of application No. 2022-167445 (JP), filed on Oct. 19, 2022.
Prior Publication US 2025/0246410 A1, Jul. 31, 2025
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/32229 (2013.01) [H01J 37/32247 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A plasma processing apparatus comprising:
a processing chamber in which a substrate to be processed is plasma processed;
a microwave power source configured to supply a microwave power to generate plasma through a waveguide;
a magnetic field generating unit configured to generate a magnetic field inside the processing chamber;
a sample stage on which the substrate to be processed is placed;
a circular waveguide configured to transmit the microwaves transmitted from the waveguide to a plurality of rectangular waveguides;
a resonator in a ring shape configured to resonate the microwaves transmitted from the plurality of rectangular waveguides;
a ground disposed below the plurality of rectangular waveguides;
a dielectric window in a cylindrical shape disposed below the ground; and
a coaxial line unit configured to supply microwave power resonated by the resonator to the processing chamber through the dielectric window.