US 12,444,574 B2
Plasma processing apparatus, and plasma processing method
Taro Ikeda, Nirasaki (JP); Mitsutoshi Ashida, Nirasaki (JP); and Eiki Kamata, Nirasaki (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Appl. No. 18/282,775
Filed by TOKYO ELECTRON LIMITED, Tokyo (JP)
PCT Filed Mar. 14, 2022, PCT No. PCT/JP2022/011208
§ 371(c)(1), (2) Date Sep. 18, 2023,
PCT Pub. No. WO2022/202432, PCT Pub. Date Sep. 29, 2022.
Claims priority of application No. 2021-053311 (JP), filed on Mar. 26, 2021.
Prior Publication US 2024/0170260 A1, May 23, 2024
Int. Cl. H01J 37/32 (2006.01); H01J 37/16 (2006.01); H01L 21/3065 (2006.01)
CPC H01J 37/32229 (2013.01) [H01J 37/16 (2013.01); H01L 21/3065 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A plasma processing apparatus comprising:
a processing container configured such that a substrate to be processed is subjected to plasma processing;
a dielectric top plate which is a quadrangular shape in a plan view and which is provided to close an upper opening of the processing container; and
a conductor plate supporting the dielectric top plate and having four electromagnetic wave emitting ports configured to emit electromagnetic waves to the dielectric top plate,
wherein each of the four electromagnetic wave emitting ports has a rectangular shape having a long side and a short side in a plan view,
the four electromagnetic wave emitting ports are arranged such that the long side of each of the four electromagnetic wave emitting ports are parallel to a closest side among four sides of the dielectric top plate forming the quadrangular shape, and
long sides of two electromagnetic wave emitting ports oriented in a same direction do not overlap each other in the same direction.