| CPC H01J 37/32128 (2013.01) [H01J 37/32183 (2013.01); H01J 37/32577 (2013.01); H01L 21/3065 (2013.01); H05H 1/46 (2013.01); H01J 2237/334 (2013.01)] | 7 Claims |

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1. A plasma processing apparatus, comprising:
a processing chamber in which a sample is subjected to plasma processing:
a first radio frequency power supply that supplies radio frequency power for generating plasma;
a sample stage that includes an electrode to which a first DC voltage for electrostatically attracting the sample is applied, and on which the sample is mounted; and
a second radio frequency power supply that supplies radio frequency power to a substrate of a conductor of the sample stage, wherein
the plasma processing apparatus further comprises a DC power supply that applies a second DC voltage, that is changed according to a periodically repeated waveform, to the substrate different from the electrode,
the waveform of one cycle has a period in which amplitude changes by a predetermined amount or more during a predetermined time,
a ratio of a time during which the second DC voltage rises to a time during which the second DC voltage falls is a value obtained by dividing a value D by a value obtained by subtracting the value D from 1, and
the value D is a value obtained by dividing mobility of ions by a sum of mobility of electrons in a dielectric on the sample and the mobility of the ions in the dielectric.
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