| CPC G11C 16/26 (2013.01) [G11C 16/0433 (2013.01); G11C 16/08 (2013.01)] | 20 Claims |
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1. An operating method of a nonvolatile memory device comprising a plurality of cell strings connected to a plurality of word lines, a plurality of string selection lines, and a plurality of ground selection lines, the operating method comprising:
receiving a read command;
in response to the read command, increasing a voltage of a plurality of unselected ground selection lines among the plurality of ground selection lines from an off voltage to an on voltage during a word line setup period;
applying a first voltage to a first selected ground selection line corresponding to a first process characteristic among a plurality of selected ground selection lines until a first time in the word line setup period;
applying a second voltage lower than the first voltage to the first selected ground selection line after the first time in the word line setup period;
applying the first voltage to a second selected ground selection line corresponding to a second process characteristic among the plurality of selected ground selection lines, until a second time earlier than the first time in the word line setup period; and
applying the second voltage to the second selected ground selection line after the second time in the word line setup period.
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