US 12,444,443 B2
Semiconductor devices having staggered conductive contacts, and associated systems and methods
Yukitoshi Hirose, Kanagawa (JP); and Yushi Inoue, Kanagawa (JP)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Feb. 17, 2023, as Appl. No. 18/111,207.
Claims priority of provisional application 63/315,839, filed on Mar. 2, 2022.
Prior Publication US 2023/0282246 A1, Sep. 7, 2023
Int. Cl. G11C 5/06 (2006.01); H01L 25/18 (2023.01); H10B 80/00 (2023.01)
CPC G11C 5/06 (2013.01) [H01L 25/18 (2013.01); H10B 80/00 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate having multiple conductive first contacts, wherein
the first contacts extend sequentially along an axis of the semiconductor device,
adjacent ones of the first contacts form a pair,
alternating adjacent ones of the pairs of the first contacts are staggered relative to the axis,
the first contacts in each of the pairs are spaced apart from one another along the axis by a first distance, and
each pair of the first contacts is spaced apart from a directly adjacent pair of the first contacts along the axis by a second distance less than the first distance;
a semiconductor die coupled to the substrate and having multiple conductive second contacts; and
multiple wire bonds electrically coupling individual ones of the first contacts to corresponding ones of the second contacts.