US 12,443,522 B2
Memory device and operating method thereof, memory system and operating method thereof
Xingwei Tang, Wuhan (CN); Guangchang Ye, Wuhan (CN); and Lu Guo, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed on Mar. 5, 2024, as Appl. No. 18/595,864.
Application 18/595,864 is a continuation of application No. PCT/CN2023/130023, filed on Nov. 6, 2023.
Prior Publication US 2025/0147878 A1, May 8, 2025
Int. Cl. G06F 12/02 (2006.01)
CPC G06F 12/0246 (2013.01) 20 Claims
OG exemplary drawing
 
1. A memory device, comprising:
an array of memory cells, including a plurality of memory cells; wherein a preset number of the memory cells forms a code word; and
a peripheral circuit coupled to the array of memory cells and configured to:
obtain a first state corresponding to at least one of the code words at a target read voltage; wherein the first state includes a state that represents a relationship of size between a number of bits in the at least one of the code words which are flipped in two results of reading at a first read voltage and a second read voltage and a first preset value; and wherein a difference between the first read voltage and the second read voltage is less than a preset voltage;
read data stored in at least one of the code words at the target read voltage to obtain a first result;
perform a first adjustment to the target read voltage and read data stored in at least one of the code words at an adjusted target read voltage to obtain a second result;
perform a logical operation on the first result and the second result to obtain a third result;
compare the number of bits in the third result that represent flip of bits in the second result relative to the first result and the first preset value to obtain a first state; and
determine a valley voltage in accordance with a variation trend of the relationship of size between the number of flipped bits and the first preset value indicated by the first state; wherein the valley voltage is a read voltage for performing a read operation on the at least one of the code words.