US 12,443,517 B2
Non-volatile memory device performing reset operation, storage device including the same, method of operating the same
Dae-Won Kim, Suwon-si (KR); and Seong Geon Lee, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jul. 22, 2024, as Appl. No. 18/779,352.
Prior Publication US 2025/0252038 A1, Aug. 7, 2025
Int. Cl. G06F 3/06 (2006.01); G06F 12/02 (2006.01)
CPC G06F 12/0223 (2013.01) [G06F 3/0617 (2013.01); G06F 3/0632 (2013.01); G06F 3/0653 (2013.01); G06F 3/0679 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of operating a non-volatile memory device, the method comprising:
receiving, at a control logic circuit of the non-volatile memory device, a first command signal for a state check operation from a storage controller;
determining, by the control logic circuit, whether the non-volatile memory device is in a busy state, based on the first command signal;
determining, by the control logic circuit, whether a busy time interval during which the busy state is continuously maintained exceeds a threshold time interval, in response to determining that the non-volatile memory device is in the busy state;
performing, by the control logic circuit, a reset operation of the non-volatile memory device, in response to determining that the busy time interval exceeds the threshold time interval; and
providing, from the control logic circuit, a fail response signal to the storage controller, in response to determining that the busy time interval exceeds the threshold time interval.