US 12,443,413 B2
Memory device and storage device including the same
Byoung Sung You, Gyeonggi-do (KR)
Assigned to SK hynix Inc., Gyeonggi-do (KR)
Filed by SK hynix Inc., Gyeonggi-do (KR)
Filed on Apr. 18, 2023, as Appl. No. 18/301,992.
Claims priority of application No. 10-2022-0167560 (KR), filed on Dec. 5, 2022.
Prior Publication US 2024/0184589 A1, Jun. 6, 2024
Int. Cl. G06F 9/38 (2018.01); G06F 9/48 (2006.01); G06F 9/52 (2006.01)
CPC G06F 9/3887 (2013.01) [G06F 9/4812 (2013.01); G06F 9/526 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A memory device comprising:
a memory region;
a plurality of subcores; and
a main core configured to control a subcore of the plurality of subcores to perform a preprocessing task in response to a preprocessing command and control one or more subcores of the plurality of subcores to perform one or more main tasks in response to an operation command subsequent to the preprocessing command,
wherein the preprocessing task includes a sub-operation of setting a peripheral circuit coupled to a target location in the memory region before accessing the target location, and
wherein the one or more main tasks includes a sub-operation of accessing the target location.