US 12,443,361 B2
Methods for performing voltage sweep operations
Robert Winston Mason, Boise, ID (US); and Tieniu Li, San Jose, CA (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jul. 24, 2024, as Appl. No. 18/782,525.
Claims priority of provisional application 63/584,140, filed on Sep. 20, 2023.
Prior Publication US 2025/0094075 A1, Mar. 20, 2025
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0653 (2013.01) [G06F 3/0614 (2013.01); G06F 3/0679 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
initializing a voltage sweep operation for a portion of a memory device;
applying, as part of a first iteration of a series of iterations of the voltage sweep operation, a first voltage to a first memory cell of the portion of the memory device;
storing, in a first element of a buffer, a first value indicating that a logic state of the first memory cell transitioned from a first logic state to a second logic state based at least in part on applying the first voltage to the first memory cell; and
storing, in an element of a memory array, a second value indicating a difference between a first quantity of first values in the first element of the buffer at the first iteration and a second quantity of first values in a second element of the buffer.