US 12,443,353 B2
Memory system restoring changed data and method of programming the same
Kang Woo Park, Icheon-si Gyeonggi-do (KR); Myung Su Kim, Icheon-si Gyeonggi-do (KR); Seong Uk Kim, Icheon-si Gyeonggi-do (KR); and Beom Seok Hah, Icheon-si Gyeonggi-do (KR)
Assigned to SK hynix Inc., Icheon-si Gyeonggi-do (KR)
Filed by SK hynix Inc., Icheon-si Gyeonggi-do (KR)
Filed on Jan. 11, 2024, as Appl. No. 18/410,558.
Claims priority of application No. 10-2023-0091214 (KR), filed on Jul. 13, 2023.
Prior Publication US 2025/0021243 A1, Jan. 16, 2025
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0625 (2013.01) [G06F 3/0659 (2013.01); G06F 3/0679 (2013.01)] 25 Claims
OG exemplary drawing
 
1. A memory system comprising:
a memory device including memory cells for storing data and a plurality of latches for storing code values indicating the data, the memory device configured to program data into each of the memory cells, store an original code value indicating the data in the plurality of latches, and change the original code value stored in the plurality of latches to an erase code value in response to a verification pass; and
a memory controller configured to output, to the memory device, a suspend command for suspending at least the programming in response to detecting a sudden power-off and a recovery command for restoring a code value changed to the erase code value;
wherein the memory device is configured to restore the changed code value to the original code value based on a threshold voltage of the memory cell in response to the recovery command.