US 12,443,346 B2
Memory access method and memory access control device
Masataka Mori, Yokohama (JP); and Takashi Yamamoto, Yokohama (JP)
Assigned to SOCIONEXT INC., Kanagawa (JP)
Filed by Socionext Inc., Kanagawa (JP)
Filed on Jun. 11, 2024, as Appl. No. 18/740,243.
Application 18/740,243 is a continuation of application No. PCT/JP2021/048185, filed on Dec. 24, 2021.
Prior Publication US 2024/0329849 A1, Oct. 3, 2024
Int. Cl. G06F 3/06 (2006.01); G06F 12/06 (2006.01)
CPC G06F 3/0613 (2013.01) [G06F 3/0635 (2013.01); G06F 3/0659 (2013.01); G06F 3/0673 (2013.01); G06F 12/06 (2013.01)] 18 Claims
OG exemplary drawing
 
18. A memory access control device comprising:
a data storage instructor that issues a data storage instruction including a first logical address, the data storage instruction instructing that, in accordance with the first logical address, one item of data be stored into a first memory or a second memory having a physical address different from a physical address of the first memory;
a first storage that, in response to the data storage instruction, stores the one item of data into the first memory via a first path;
a second storage that, in response to the data storage instruction, stores the one item of data into the second memory via a second path; and
a first storage path selector that, in response to the data storage instruction, performs first selecting of selecting whether to execute storing by the first storage or storing by the second storage based on the first logical address included in the data storage instruction, wherein
the first storage path selector:
performs the first selecting based on a first interleave rule or a second interleave rule that assigns a physical address to the first logical address; and
performs the first selecting based on the first interleave rule in response to one or more data storage instructions, each being the data storage instruction, and performs the first selecting based on the second interleave rule in response to subsequent one or more data storage instructions, each being the data storage instruction.