US 12,443,117 B2
Methods and apparatus for reducing hydrogen permeation from lithographic tool
Chi-Hung Liao, Hsinchu (TW); and Po-Ming Shih, Sanchong (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 22, 2024, as Appl. No. 18/671,187.
Application 18/671,187 is a continuation of application No. 18/100,409, filed on Jan. 23, 2023, granted, now 12,025,922.
Application 18/100,409 is a continuation of application No. 17/351,964, filed on Jun. 18, 2021, granted, now 11,561,482, issued on Jan. 24, 2023.
Prior Publication US 2024/0310743 A1, Sep. 19, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/20 (2006.01); G03F 1/22 (2012.01); G03F 7/00 (2006.01)
CPC G03F 7/70916 (2013.01) [G03F 1/22 (2013.01); G03F 7/70033 (2013.01); G03F 7/70525 (2013.01); G03F 7/70533 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A lithography apparatus, the apparatus comprising:
a first nozzle configured to dispense a first gas below a reticle;
an exhaust configured to exhaust the first gas dispensed from the first nozzle; and
a second nozzle positioned between the reticle and the first nozzle and configured to dispense a second gas having a molecular weight different from the first gas;
wherein the exhaust is located at a greater distance than the first nozzle from a bottom surface of the reticle along a normal direction of the bottom surface of the reticle such that a trajectory of the first gas dispensed from the first nozzle is away from the bottom surface of the reticle, and
the second nozzle is located at a closer distance from the bottom surface of the reticle than the first nozzle.