US 12,443,108 B2
Substrate treating apparatus
Ho Jin Jang, Cheonan-si (KR)
Assigned to Semes Co., LTD., Chungcheongnam-do (KR)
Filed by SEMES CO., LTD., Cheonan-si (KR)
Filed on Jun. 3, 2022, as Appl. No. 17/831,935.
Claims priority of application No. 10-2021-0073629 (KR), filed on Jun. 7, 2021.
Prior Publication US 2022/0390859 A1, Dec. 8, 2022
Int. Cl. G03F 7/30 (2006.01)
CPC G03F 7/3092 (2013.01) [G03F 7/3021 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A substrate treating apparatus, comprising:
a first process chamber having a first treatment space therein;
a second process chamber having a second treatment space therein; and
an exhaust unit configured to exhaust atmosphere of the first treatment space and the second treatment space,
wherein the exhaust unit includes:
an integrated exhaust line;
a first exhaust line connecting the first process chamber and the integrated exhaust line;
a second exhaust line connecting the second process chamber and the integrated exhaust line;
a partition wall configured to partition a partial section of a flow path within the integrated exhaust line into a first flow path through which a fluid exhausted through the first exhaust line flows and a second flow path through which a fluid discharged through the second exhaust line flows;
a first damper configured to adjust an exhaust flow rate of the first flow path independently from the second flow path; and
a second damper configured to adjust an exhaust flow rate of the second flow path independently from the first flow path,
wherein the partition wall is configured to partition the flow path of the integrated exhaust line by acting as a partitioning structure such that
the first flow path is defined by the partition wall on a first side and inner walls of the integrated exhaust line on all other sides, and
the second flow path is defined by the partition wall on an opposite side and the inner walls of the integrated exhaust line on all other sides,
wherein a first end of the partition wall is in contact with a first sidewall of the inner walls of the integrated exhaust line between the first exhaust line and the second exhaust line,
a second end of the partition wall is located between the first sidewall and a second sidewall facing the first sidewall,
wherein the partition wall includes
a first portion extending at a first angle from the first sidewall of the inner walls of the integrated exhaust line to contact an end of a second portion, and
the second portion extends parallel with the inner walls of the integrated exhaust line,
wherein a sidewall of the first portion of the partition wall faces an opening of the second exhaust line at a second angle, the second exhaust line extending in a direction perpendicular to a surface of the sidewall of the second portion.