US 12,443,100 B2
Mask pattern
Qiang Shu, Shanghai (CN); Yingchun Zhang, Shanghai (CN); and Liusha Qin, Shanghai (CN)
Assigned to Semiconductor Manufacturing International (Beijing) Corporation, Beijing (CN); and Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai (CN)
Filed by Semiconductor Manufacturing International (Beijing) Corporation, Beijing (CN); and Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai (CN)
Filed on Jul. 15, 2022, as Appl. No. 17/866,432.
Application 17/866,432 is a division of application No. 17/036,691, filed on Sep. 29, 2020, granted, now 11,424,122.
Claims priority of application No. 202010010444.9 (CN), filed on Jan. 6, 2020.
Prior Publication US 2022/0351965 A1, Nov. 3, 2022
Int. Cl. G03F 1/00 (2012.01); G03F 1/80 (2012.01); G03F 7/00 (2006.01); H01L 21/033 (2006.01); H01L 21/33 (2006.01)
CPC G03F 1/00 (2013.01) [G03F 1/80 (2013.01); H01L 21/0337 (2013.01); G03F 7/0035 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A mask pattern, comprising:
a first mask pattern, wherein the first mask pattern includes a plurality of first target patterns, and the plurality of first target patterns are arranged along a first direction;
a second mask pattern, wherein the second mask pattern includes a plurality of second target patterns, and the plurality of second target patterns are arranged along the first direction, wherein:
when the first mask pattern overlaps the second mask pattern, one of the plurality of first target patterns partially overlaps a corresponding one of the plurality of second target patterns,
position and size of the plurality of first target patterns define position and size of a plurality of mask structures, each mask structure including a first mask layer, a second mask layer, and a first sidewall spacer sandwiched there-between within the mask structure,
position and size of overlapped portion of corresponding first and second target patterns defines position and size of a second mask layer of a corresponding mask structure, and
position of an end of non-overlapped portion of the second target pattern defines a position of a side surface of the second sidewall spacer that is between adjacent mask structures.