US 12,443,090 B2
Light modulating device and electronic apparatus using the same
Junghyun Park, Seoul (KR); Meir Grajower, Pasadena, CA (US); Harry Atwater, Pasadena, CA (US); Ruzan Sokhoyan, Pasadena, CA (US); and Prachi Thureja, Pasadena, CA (US)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR); and CALIFORNIA INSTITUTE OF TECHNOLOGY, Pasadena, CA (US)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR); and CALIFORNIA INSTITUTE OF TECHNOLOGY, Pasadena, CA (US)
Filed on Jun. 23, 2021, as Appl. No. 17/356,077.
Claims priority of provisional application 63/130,093, filed on Dec. 23, 2020.
Claims priority of application No. 10-2020-0183792 (KR), filed on Dec. 24, 2020.
Prior Publication US 2022/0197105 A1, Jun. 23, 2022
Int. Cl. G01C 3/08 (2006.01); G01S 7/481 (2006.01); G01S 17/08 (2006.01); G02F 1/29 (2006.01)
CPC G02F 1/292 (2013.01) [G01S 7/4817 (2013.01); G01S 17/08 (2013.01); G02F 2202/101 (2013.01); G02F 2202/108 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A light modulating device for modulating incident light in a given wavelength band, the light modulating device comprising:
a first semiconductor layer;
an active layer provided on the first semiconductor layer, the active layer having a multiple quantum well structure and a refractive index that is variable according to an electric field applied thereto; and
a second semiconductor layer provided on the active layer, the second semiconductor layer comprising a grating pattern in which a plurality of gratings extending in a first direction are repeatedly arranged in a second direction perpendicular to the first direction,
wherein the first semiconductor layer comprises a plurality of protruding elements extending in a third direction that is perpendicular to the first direction and the second direction and on which the active layer and the second semiconductor layer are provided, the plurality of protruding elements corresponding to the grating pattern, and
wherein, in the third direction, a thickness of each of the plurality of protruding elements is greater than a thickness of the active layer and a thickness of the second semiconductor layer.