US 12,443,077 B2
Display device
Tsung-Han Tsai, Miao-Li County (TW); Hsia-Ching Chu, Miao-Li County (TW); and Mei-Chun Shih, Miao-Li County (TW)
Assigned to Red Oak Innovations Limited, Dublin (IE)
Filed by Red Oak Innovations Limited, Dublin (IE)
Filed on Jun. 12, 2024, as Appl. No. 18/740,844.
Application 16/223,355 is a division of application No. 15/587,428, filed on May 5, 2017, granted, now 10,197,869, issued on Feb. 5, 2019.
Application 18/740,844 is a continuation of application No. 18/133,073, filed on Apr. 11, 2023, granted, now 12,038,654.
Application 18/133,073 is a continuation of application No. 17/944,660, filed on Sep. 14, 2022, granted, now 11,656,507, issued on May 23, 2023.
Application 17/944,660 is a continuation of application No. 16/999,350, filed on Aug. 21, 2020, granted, now 11,474,400, issued on Oct. 18, 2022.
Application 16/999,350 is a continuation of application No. 16/223,355, filed on Dec. 18, 2018, granted, now 10,802,352, issued on Oct. 13, 2020.
Claims priority of application No. 105114848 (TW), filed on May 13, 2016.
Prior Publication US 2024/0329464 A1, Oct. 3, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G02F 1/1343 (2006.01); G02F 1/1333 (2006.01); G02F 1/1337 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01)
CPC G02F 1/134309 (2013.01) [G02F 1/133345 (2013.01); G02F 1/13439 (2013.01); G02F 1/136286 (2013.01); G02F 1/1368 (2013.01); G02F 1/133707 (2013.01); G02F 1/134363 (2013.01); G02F 1/136227 (2013.01); G02F 2202/10 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A semiconductor substrate, comprising:
a substrate;
a first conductive line disposed on the substrate and extending along a first direction;
a semiconductor layer disposed on the substrate, wherein the first conductive line comprises a first part overlapping with the semiconductor layer and a second part connected to the first part and not overlapping with the semiconductor layer, the first part of the first conductive line has a first width along a second direction different from the first direction, the second part of the first conductive line has a second width along the second direction, and the first width is greater than the second width; and
an electrode disposed on the semiconductor layer and comprising an arc edge outside the first conductive line,
wherein the semiconductor layer comprises a first part extending along the second direction and overlapping with the arc edge and a second part connected to the first part of the semiconductor layer and overlapping with a side of the first part of the first conductive line.