US 12,442,978 B2
Photonic package and method of manufacture
Chen-Hua Yu, Hsinchu (TW); Hsing-Kuo Hsia, Jhubei (TW); Kuo-Chiang Ting, Hsinchu (TW); Jiun Yi Wu, Zhongli (TW); Hung-Yi Kuo, Taipei (TW); and Shang-Yun Hou, Jubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jun. 12, 2024, as Appl. No. 18/741,308.
Application 18/741,308 is a continuation of application No. 17/340,363, filed on Jun. 7, 2021, granted, now 12,038,599.
Claims priority of provisional application 63/084,051, filed on Sep. 28, 2020.
Prior Publication US 2024/0329302 A1, Oct. 3, 2024
Int. Cl. G02B 6/12 (2006.01); H01L 23/00 (2006.01); H01L 25/16 (2023.01); H01L 25/18 (2023.01); H10F 77/00 (2025.01); H10F 77/40 (2025.01)
CPC G02B 6/12004 (2013.01) [H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 25/167 (2013.01); H01L 25/18 (2013.01); H10F 77/413 (2025.01); H10F 77/93 (2025.01); H01L 24/08 (2013.01); H01L 24/32 (2013.01); H01L 24/80 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/211 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A package comprising:
a first oxide layer;
a plurality of first silicon waveguides on the first oxide layer;
a plurality of first photonic devices on the first oxide layer;
a plurality of first redistribution structures over the plurality of first silicon waveguides and plurality of first photonic devices, wherein the first redistribution structures are electrically coupled to the first photonic devices;
a second oxide layer over the plurality of first redistribution structures;
a plurality of second silicon waveguides on the second oxide layer;
a plurality of second photonic devices on the second oxide layer;
a plurality of second redistribution structures over the plurality of second silicon waveguides and plurality of second photonic devices, wherein the second redistribution structures are electrically coupled to the second photonic devices and to the first redistribution structures; and
a plurality of semiconductor dies bonded to the plurality of second redistribution structures.