US 12,442,921 B2
Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component
Fabian Knorr, Postbauer-Heng (DE); Tony Albrecht, Bad Abbach (DE); and Markus Boss, Regensburg (DE)
Assigned to OSRAM OPTO SEMICONDUCTORS GMBH, Regensburg (DE)
Appl. No. 17/432,326
Filed by OSRAM Opto Semiconductors GmbH, Regensburg (DE)
PCT Filed Feb. 21, 2020, PCT No. PCT/EP2020/054644
§ 371(c)(1), (2) Date Aug. 19, 2021,
PCT Pub. No. WO2020/173830, PCT Pub. Date Sep. 3, 2020.
Claims priority of application No. 102019104986.5 (DE), filed on Feb. 27, 2019.
Prior Publication US 2022/0171057 A1, Jun. 2, 2022
Int. Cl. G02B 27/42 (2006.01); G01S 7/481 (2006.01); G01S 7/484 (2006.01); G01S 7/4865 (2020.01); G01S 17/08 (2006.01); H01S 5/02234 (2021.01); H01S 5/0232 (2021.01); H01S 5/183 (2006.01)
CPC G01S 17/08 (2013.01) [G01S 7/4814 (2013.01); G01S 7/484 (2013.01); G01S 7/4865 (2013.01); H01S 5/0232 (2021.01); H01S 5/02234 (2021.01); H01S 5/183 (2013.01)] 18 Claims
OG exemplary drawing
 
1. An optoelectronic semiconductor device comprising:
an optoelectronic semiconductor chip for emitting radiation,
an optical element disposed optically downstream of the semiconductor chip, and
potting body in which said semiconductor chip and said optical element are embedded,
wherein
the optical element comprises a structured, contiguous and optically effective area which is located inside the optical element directly at an optical contrast region, so that a refractive index jump of at least 0.4 is present between the optically effective area and the optical contrast region,
the optically effective area completely covers a radiation exit area of the semiconductor chip, and
the potting body directly surrounds the semiconductor chip and the optical element all around laterally in a form-fitting manner.