US 12,442,875 B2
Magnetic sensor device having an improved measurement range
Salim Dounia, Grenoble (FR); and Claire Baraduc, Chirens (FR)
Assigned to Allegro MicroSystems, LLC, Manchester, NH (US); and COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES, Paris (FR)
Appl. No. 18/553,000
Filed by Allegro MicroSystems, LLC, Manchester, NH (US); and COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES, Paris (FR)
PCT Filed Mar. 8, 2022, PCT No. PCT/IB2022/052046
§ 371(c)(1), (2) Date Sep. 28, 2023,
PCT Pub. No. WO2022/208192, PCT Pub. Date Oct. 6, 2022.
Claims priority of application No. 21315054 (EP), filed on Mar. 29, 2021.
Prior Publication US 2024/0192291 A1, Jun. 13, 2024
Int. Cl. G01R 33/09 (2006.01); G01R 33/00 (2006.01)
CPC G01R 33/098 (2013.01) [G01R 33/0005 (2013.01); G01R 33/0094 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A magnetic sensor device comprising a plurality of magnetic sensor elements;
each magnetic sensor element comprising a magnetic tunnel junction including a reference layer having a reference magnetization, a sense layer having a sense magnetization and a tunnel barrier layer between the reference layer and the sense layer;
the sense magnetization comprising a stable vortex configuration in the absence of an external magnetic field, the vortex having a core reversibly movable in a plane of each sense layer according to an external magnetic field;
the sense layer comprising a peripheral shape in the plane (P), the peripheral shape comprising a single asymmetric edge portion;
wherein the plurality of magnetic sensor elements comprise at least a first magnetic sensor element and a second magnetic sensor element, wherein the first magnetic sensor element and the second magnetic sensor element are adjacent to one another, and wherein the first magnetic sensor element and the second magnetic sensor element are arranged so that the single asymmetric edge portion of the first magnetic sensor element is facing away from the second magnetic sensor element, and the single asymmetric edge portion of the second magnetic sensor element is facing away from the first magnetic sensor element, so that the single asymmetric edge portion of the first magnetic sensor element is opposite to the single asymmetric edge portion of the second magnetic sensor element, and wherein the distance between the first magnetic sensor element and the second magnetic sensor element is such that the magnetostatic interaction between the first magnetic sensor element and the second magnetic sensor element is so that the intrinsic offsets ΔMi, of the first and second magnetic sensor elements are compensated, such that an averaged offset ΔMa of the magnetic sensor device is substantially null.