US 12,442,871 B2
Magnetoresistive element having compensated temperature coefficient of TMR
Andrey Timopheev, Vif (FR); Clarisse Ducruet, Chambéry (FR); and Jeffrey Childress, San Jose, CA (US)
Assigned to Allegro MicroSystems, LLC, Manchester, NH (US)
Appl. No. 18/294,283
Filed by Allegro MicroSystems, LLC, Manchester, NH (US)
PCT Filed Jul. 8, 2022, PCT No. PCT/IB2022/056992
§ 371(c)(1), (2) Date Feb. 1, 2024,
PCT Pub. No. WO2023/012612, PCT Pub. Date Feb. 9, 2023.
Claims priority of application No. 21315136 (EP), filed on Aug. 5, 2021.
Prior Publication US 2024/0345182 A1, Oct. 17, 2024
Int. Cl. G01R 33/00 (2006.01); G01R 33/09 (2006.01); H01F 10/32 (2006.01)
CPC G01R 33/0082 (2013.01) [G01R 33/098 (2013.01); H01F 10/3254 (2013.01)] 15 Claims
OG exemplary drawing
 
1. Magnetoresistive element, comprising:
a reference layer having a pinned reference magnetization;
a ferromagnetic sense layer having a free sense magnetization comprising a stable vortex configuration; and
a tunnel barrier layer between the reference layer and the sense layer;
wherein the sense layer comprises a first sense layer portion in contact with the tunnel barrier layer and a second sense layer portion in contact with the first sense layer portion;
wherein the first sense layer portion is configured such that a magnetic coupling between the first and second sense layer portions is between ±10−4 J/m2 and ±10−3 J/m2; and a perpendicular magnetic anisotropy (PAM) originating from the interface between the first sense layer portion and the tunnel barrier layer is between 8×104 A/m and 8×105 A/m, such as to shift positively the temperature coefficient of sensitivity (TCS) of the magnetoresistive element and compensate the negative temperature coefficient of TMR of the magnetoresistive element.