US 12,442,805 B1
Method for making a zinc oxide thin film
Qasem Ahmed Drmosh, Dhahran (SA); Zain Hassan Yamani, Dhahran (SA); and Mohammad Kamal Hossain, Dhahran (SA)
Assigned to KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS, Dhahran (SA)
Filed by KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS, Dhahran (SA)
Filed on May 13, 2025, as Appl. No. 19/207,202.
Application 17/976,466 is a division of application No. 16/667,258, filed on Oct. 29, 2019, granted, now 11,493,493, issued on Nov. 8, 2022.
Application 16/667,258 is a division of application No. 15/863,823, filed on Jan. 5, 2018, granted, now 11,525,818, issued on Dec. 13, 2022.
Application 19/207,202 is a continuation of application No. 17/976,466, filed on Oct. 28, 2022, granted, now 12,306,163.
This patent is subject to a terminal disclaimer.
Int. Cl. G01N 33/00 (2006.01); C23C 8/16 (2006.01); G01N 27/12 (2006.01); G01N 27/407 (2006.01)
CPC G01N 33/005 (2013.01) [C23C 8/16 (2013.01); G01N 27/127 (2013.01); G01N 27/4075 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A method for making a zinc oxide thin film, comprising:
depositing a Zn metal thin film on a silicon wafer substrate; and
thermally oxidizing the Zn metal thin film at a temperature of 200 to 1,000° C. in the presence of a gaseous mixture comprising H2, H2O and O2 having an oxygen partial pressure in a range of 10−60 to 10−1 atm to form a zinc oxide nanostructured thin film on the silicon wafer substrate,
wherein the zinc oxide nanostructured thin film has a thickness in a range of 10 to 1,000 nm and is porous having first pores with an average pore size of 1 to 20 nm and second pores with an average pore size of 4 to 12 Å.