US 12,442,789 B2
Semiconductor device, biosensor, biosensor array, and logic circuit
Ryota Suto, Tokyo (JP); and Katsuya Ujimoto, Tokyo (JP)
Assigned to RICOH COMPANY, LTD., Tokyo (JP)
Filed by Ryota Suto, Tokyo (JP); and Katsuya Ujimoto, Tokyo (JP)
Filed on Jul. 26, 2022, as Appl. No. 17/873,159.
Claims priority of application No. 2021-125807 (JP), filed on Jul. 30, 2021; and application No. 2022-087025 (JP), filed on May 27, 2022.
Prior Publication US 2023/0032228 A1, Feb. 2, 2023
Int. Cl. G01N 27/414 (2006.01)
CPC G01N 27/4145 (2013.01) [G01N 27/4146 (2013.01); G01N 27/4148 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first gate electrode;
a first insulating unit, the first insulating unit including at least one first insulating layer provided on a second gate electrode configured to control a reference voltage in a transport characteristic;
a second insulating layer, the second gate electrode being stacked directly on the second insulating layer;
a source electrode connected to the first insulating unit;
a drain electrode connected to the first insulating unit;
a contact part provided between the source electrode and the drain electrode on the first insulating unit, and being able to be in contact with a sample, wherein
the sample is able to be in contact with the first gate electrode,
a surface opposite to the first insulating unit, of the contact part is configured to be in contact with the sample,
the at least one first insulating layer is stacked directly on the second insulating layer and the second gate electrode,
the source electrode and the drain electrode are stacked directly on the second insulating layer and the at least one first insulating layer, and
the at least one first insulating layer includes a material that is different from a material of the second insulating layer.