US 12,442,788 B2
Multi-gate OECT based sensor
Anna Shirinskaya, Orsay Ville (FR); and Yvan Bonnassieux, Paris (FR)
Assigned to ECOLE POLYTECHNIQUE; CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, (FR)
Appl. No. 17/626,255
Filed by ECOLE POLYTECHNIQUE, Palaiseau (FR); and CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris (FR)
PCT Filed Jul. 9, 2020, PCT No. PCT/EP2020/069464
§ 371(c)(1), (2) Date Jan. 11, 2022,
PCT Pub. No. WO2021/005187, PCT Pub. Date Jan. 14, 2021.
Claims priority of application No. 19305930 (EP), filed on Jul. 11, 2019.
Prior Publication US 2022/0276199 A1, Sep. 1, 2022
Int. Cl. G01N 27/414 (2006.01)
CPC G01N 27/4145 (2013.01) 10 Claims
OG exemplary drawing
 
1. A detection device comprising an Organic Electro-Chemical Transistor (OECT) based sensor, comprising:
at least one set of source and drain electrodes;
a plurality of gate electrodes for said at least one set;
at least one channel connected to the source and drain electrodes of the at least one set;
at least one depolarizing electrode, the at least one depolarizing electrode extending on a substrate parallel the at least one channel, wherein the plurality of gate electrodes are situated on the substrate between the at least one depolarizing electrode and the at least one channel; and
wherein at least two gate electrodes of said plurality of gate electrodes are differently functionalized and said detection device is configured for applying a predefined potential on the at least one depolarizing electrode for de-doping said at least one channel before addressing a gate electrode of said plurality of gate electrodes.