US 12,442,691 B1
Method and device for photodetector circuit with near infrared compliant substrate
Bei Shi, Goleta, CA (US); Jonathan Klamkin, Goleta, CA (US); Simone Suran Brunelli, Goleta, CA (US); and Bowen Song, Goleta, CA (US)
Assigned to Aeluma, Inc., Goleta, CA (US)
Filed by Aeluma, Inc., Goleta, CA (US)
Filed on Jul. 20, 2023, as Appl. No. 18/355,608.
Int. Cl. G01J 5/20 (2006.01)
CPC G01J 5/20 (2013.01) 20 Claims
OG exemplary drawing
 
1. A sensor device configured for a selected wavelength, the device comprising:
a silicon substrate comprising a backside region and a frontside region, wherein the silicon substrate comprises a plurality of v-grooves formed within the frontside region;
a first GaAs buffer region overlying the plurality of v-grooves;
a defect filter layer (DFL) region overlying the first GaAs buffer region;
a second GaAs buffer region overlying the DFL region;
an n+ GaAs contact region overlying the second GaAs buffer region;
a strained InxGa1-xAs (P) absorber region overlying the n+ GaAs contact region;
a p-GaAs spacer region overlying the InxGa1-xAs (P) absorber region; and
a p+ GaAs contact region overlying the p-GaAs spacer region.