US 12,442,066 B2
Substrate processing method
Teppei Nakano, Ismaning (DE); Takayoshi Tanaka, Kyoto (JP); Shota Iwahata, Ismaning (DE); and Hiroyuki Yashiki, Kyoto (JP)
Assigned to SCREEN Holdings Co., Ltd., Kyoto (JP)
Filed by SCREEN Holdings Co., Ltd., Kyoto (JP)
Filed on Jul. 28, 2023, as Appl. No. 18/361,277.
Claims priority of application No. 2022-122032 (JP), filed on Jul. 29, 2022.
Prior Publication US 2024/0035141 A1, Feb. 1, 2024
Int. Cl. C23C 8/12 (2006.01); C23C 8/80 (2006.01); C23F 1/00 (2006.01)
CPC C23C 8/12 (2013.01) [C23C 8/80 (2013.01); C23F 1/00 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A substrate processing method comprising:
heating a plurality of substrates disposed in an oxidation space inside a substrate processing apparatus while supplying an oxygen gas or an ozone gas to the plurality of substrates inside the oxidation space to change, in each of the plurality of substrates, a surface layer of a molybdenum film formed on the substrate to molybdenum trioxide without changing a portion other than the surface layer of the molybdenum film to the molybdenum trioxide;
transferring the plurality of substrates inside the oxidation space to an etching space inside the substrate processing apparatus differing from the oxidation space; and
supplying an etching liquid to the plurality of substrates inside the etching space to make, in each of the plurality of substrates, the surface layer that changed to the molybdenum trioxide dissolve in the etching liquid while leaving, on the substrate, the portion other than the surface layer of the molybdenum film.