US 12,441,912 B2
Chemical mechanical polishing slurry composition and method of polishing metal layer
Chun-Hung Liao, Taichung (TW); An-Hsuan Lee, Hsinchu (TW); Shen-Nan Lee, Hsinchu County (TW); Teng-Chun Tsai, Hsinchu (TW); Chen-Hao Wu, Hsinchu (TW); and Huang-Lin Chao, Hillsboro, OR (US)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jun. 4, 2024, as Appl. No. 18/733,763.
Application 17/688,869 is a division of application No. 16/805,864, filed on Mar. 2, 2020, granted, now 11,267,987, issued on Mar. 8, 2022.
Application 18/733,763 is a continuation of application No. 17/688,869, filed on Mar. 7, 2022, granted, now 12,024,651.
Claims priority of provisional application 62/928,312, filed on Oct. 30, 2019.
Prior Publication US 2024/0327677 A1, Oct. 3, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. C09G 1/02 (2006.01); B24B 1/00 (2006.01); B24B 37/04 (2012.01); C09G 1/00 (2006.01); C09G 1/04 (2006.01); C09G 1/06 (2006.01); C09K 3/14 (2006.01); C09K 13/06 (2006.01); H01L 21/306 (2006.01); H01L 21/321 (2006.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01)
CPC C09G 1/02 (2013.01) [B24B 1/00 (2013.01); B24B 37/044 (2013.01); C09G 1/00 (2013.01); C09G 1/04 (2013.01); C09G 1/06 (2013.01); C09K 3/1454 (2013.01); C09K 3/1463 (2013.01); C09K 13/06 (2013.01); H01L 21/30625 (2013.01); H01L 21/3212 (2013.01); H10D 84/0172 (2025.01); H10D 84/038 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method of polishing a metal layer, comprising:
providing a substrate having a gate structure and a metal stack aside the gate structure, wherein the gate structure has a gate electrode and a dielectric helmet over the gate electrode;
sequentially forming a first dielectric layer and a second dielectric layer over the gate structure and the metal stack;
forming an opening that penetrates through the first dielectric layer and the second dielectric layer and exposes the metal stack;
forming a metal layer over the second dielectric layer and filling in the opening;
performing a first polishing operation with a first polishing slurry composition until the second dielectric layer is exposed; and
performing a second polishing operation with a second polishing slurry composition until the first dielectric layer is exposed.