US 12,441,911 B2
Composition for semiconductor processing and polishing method of semiconductor device using the same
Deok Su Han, Seoul (KR); Seung Chul Hong, Seoul (KR); Han Teo Park, Seoul (KR); Hwan Chul Kim, Seoul (KR); and Hyeong Ju Lee, Seoul (KR)
Assigned to SK enpulse Co., Ltd., Pyeongtaek-si (KR)
Filed by SK enpulse Co., Ltd., Pyeongtaek-si (KR)
Filed on Apr. 7, 2023, as Appl. No. 18/297,152.
Claims priority of application No. 10-2022-0045762 (KR), filed on Apr. 13, 2022.
Prior Publication US 2023/0332016 A1, Oct. 19, 2023
Int. Cl. C09G 1/02 (2006.01); C09K 3/14 (2006.01); H01L 21/306 (2006.01)
CPC C09G 1/02 (2013.01) [C09K 3/1436 (2013.01); H01L 21/30625 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A composition for semiconductor processing, comprising:
abrasive particles surface-modified with an amino silane-based compound;
a copper erosion inhibitor, including an azole-based compound;
a copper surface protectant, including a compound having a betaine group and a salicylic group or a derivative thereof; and
a surfactant, including fluorine in a molecule thereof,
wherein a surface of the surface-modified abrasive particles comprises an amino silane group.