US 12,114,579 B2
Method of fabricating resistive random access memory cell
Po-Yen Hsu, Taichung (TW); Bo-Lun Wu, Taichung (TW); and Tse-Mian Kuo, Taichung (TW)
Assigned to Winbond Electronics Corp., Taichung (TW)
Filed by Winbond Electronics Corp., Taichung (TW)
Filed on Sep. 7, 2023, as Appl. No. 18/463,268.
Application 18/463,268 is a division of application No. 17/465,840, filed on Sep. 2, 2021, granted, now 11,800,815.
Claims priority of application No. 110115318 (TW), filed on Apr. 28, 2021.
Prior Publication US 2023/0422638 A1, Dec. 28, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 11/00 (2006.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01)
CPC H10N 70/021 (2023.02) [H10B 63/84 (2023.02); H10N 70/063 (2023.02); H10N 70/066 (2023.02); H10N 70/068 (2023.02); H10N 70/841 (2023.02); H10N 70/8833 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method of fabricating a resistive random access memory cell, comprising:
forming a stacked layer alternately stacked by a plurality of first conductive layers and a plurality of first sacrificial layers on a first dielectric layer;
patterning the stacked layer to form a patterned stacked layer;
forming a second sacrificial layer around the patterned stacked layer;
forming an opening passing through the plurality of first conductive layers and the plurality of first sacrificial layers in the patterned stacked layer;
forming a second conductive layer in the opening, wherein the second conductive layer and the plurality of first conductive layers form a first electrode layer;
removing the plurality of first sacrificial layers and the second sacrificial layer;
forming a variable resistance layer and an oxygen reservoir layer on a surface of the first electrode layer and a top surface of the first dielectric layer;
patterning the oxygen reservoir layer to form a patterned oxygen reservoir layer and expose the variable resistance layer;
forming a second dielectric layer on the variable resistance layer and the patterned oxygen reservoir layer; and
forming a second electrode in the second dielectric layer, wherein the second electrode covers a top surface and an upper sidewall of the patterned oxygen reservoir layer.