US 12,114,548 B2
Display apparatus having a connecting electrode which crosses a bending area
Jeong-Oh Kim, Goyang-si (KR); Seung-Chan Choi, Paju-si (KR); and Jei-Hyun Lee, Goyang-si (KR)
Assigned to LG Display Co., Ltd., Seoul (KR)
Filed by LG Display Co., Ltd., Seoul (KR)
Filed on Dec. 14, 2022, as Appl. No. 18/081,349.
Application 18/081,349 is a continuation of application No. 17/135,719, filed on Dec. 28, 2020, granted, now 11,557,643.
Claims priority of application No. 10-2019-0180184 (KR), filed on Dec. 31, 2019; and application No. 10-2020-0162230 (KR), filed on Nov. 27, 2020.
Prior Publication US 2023/0118675 A1, Apr. 20, 2023
Int. Cl. H10K 59/131 (2023.01); G06F 3/041 (2006.01); G06F 3/044 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H10K 50/844 (2023.01); H10K 59/12 (2023.01); H10K 59/121 (2023.01); H10K 59/124 (2023.01); H10K 59/40 (2023.01); H10K 71/00 (2023.01); H10K 77/10 (2023.01); H10K 102/00 (2023.01)
CPC H10K 59/131 (2023.02) [G06F 3/0412 (2013.01); G06F 3/0446 (2019.05); H10K 50/844 (2023.02); H10K 59/1213 (2023.02); H10K 59/124 (2023.02); H10K 59/40 (2023.02); H10K 71/00 (2023.02); H10K 77/111 (2023.02); H01L 27/1225 (2013.01); H01L 27/1251 (2013.01); H01L 29/78675 (2013.01); H01L 29/7869 (2013.01); H10K 59/1201 (2023.02); H10K 2102/311 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A display apparatus comprising:
a device substrate including a display area, a gate driver area, a bending area, and a pad area, the display area including a hole peripheral area comprising a substrate hole that penetrates the device substrate;
a first thin film transistor including a first semiconductor film, a first gate electrode, a first source electrode, and a first drain electrode in the display area;
a second thin film transistor including a second semiconductor film, a second gate electrode, a second source electrode, and a second drain electrode in the display area, the second semiconductor film disposed on a different layer from the first semiconductor film;
a third thin film transistor including a third semiconductor film, a third gate electrode, a third source electrode, and a third drain electrode in the gate driver area, the third semiconductor film including a same materials as one of the first semiconductor film and the second semiconductor film;
a light-emitting device on the display area of the device substrate;
an over-coating layer disposed between the second thin film transistor and the light-emitting device;
a lower connecting electrode on the device substrate, the lower connecting electrode crossing the bending area of the device substrate;
a crack preventing layer on the lower connecting electrode, the crack preventing layer including a region overlapping with the bending area; and
an upper connecting electrode on the crack preventing layer, the upper connecting electrode crossing the bending area and electrically connected to the lower connecting electrode; and
a pad in the pad area, the pad connected to the upper connecting electrode in the pad area,
wherein the crack preventing layer includes a same material as the over-coating layer, the crack preventing layer covers an end of the lower connecting electrode, and the crack preventing layer is non-overlapping with the pad in the pad area.