US 12,114,516 B2
Photoelectric conversion element, method of manufacturing the same, solid state image sensor, electronic device, and solar cell
Yukio Kaneda, Kanagawa (JP)
Assigned to SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Filed on Jan. 20, 2022, as Appl. No. 17/648,543.
Application 17/648,543 is a continuation of application No. 15/773,675, granted, now 11,264,580, previously published as PCT/JP2016/083325, filed on Nov. 10, 2016.
Claims priority of application No. 2015-228427 (JP), filed on Nov. 24, 2015.
Prior Publication US 2022/0149304 A1, May 12, 2022
Int. Cl. H10K 30/30 (2023.01); H01L 27/146 (2006.01); H10K 30/82 (2023.01); H10K 39/32 (2023.01)
CPC H10K 30/353 (2023.02) [H01L 27/146 (2013.01); H01L 27/1461 (2013.01); H01L 27/14643 (2013.01); H01L 27/14645 (2013.01); H01L 27/14667 (2013.01); H10K 30/82 (2023.02); H10K 39/32 (2023.02); H01L 27/14665 (2013.01); Y02E 10/549 (2013.01); Y02P 70/50 (2015.11)] 11 Claims
OG exemplary drawing
 
1. A photoelectric conversion element, comprising:
a first electrode configured to collect holes;
a second electrode configured to collect electrons;
a first photoelectric conversion layer between the first electrode and the second electrode;
a second photoelectric conversion layer between the first photoelectric conversion layer and the first electrode; and
a third photoelectric conversion layer between the first photoelectric conversion layer and the second electrode, wherein
each of the first photoelectric conversion layer, second photoelectric conversion layer, and the third photoelectric conversion layer comprises an electron donating material and an electron accepting material,
the second photoelectric conversion layer is doped with an electron accepting impurity, different from the electron accepting material, exhibiting an electron accepting property at an impurity density of at least 1e16/cm3, and
the third photoelectric conversion layer is doped with an electron donating impurity, different from the electron donating material, exhibiting an electron donating property at an impurity density of at least 1e16/cm3.