US 12,114,515 B2
Thin film transistors comprising carbon nanotube networks encapsulated by a polymeric layer and methods for the manufacture thereof
Jacques Lefebvre, Stoneham-et-Tewkesbury (CA); Francois Lapointe, Gatineau (CA); Zhao Li, Ottawa (CA); Jianfu Ding, Ottawa (CA); and Patrick Roland Lucien Malenfant, Ottawa (CA)
Assigned to National Research Council of Canada, Ottawa (CA)
Appl. No. 17/312,678
Filed by National Research Council of Canada, Ottawa (CA)
PCT Filed Dec. 17, 2019, PCT No. PCT/CA2019/051838
§ 371(c)(1), (2) Date Jun. 10, 2021,
PCT Pub. No. WO2020/124225, PCT Pub. Date Jun. 25, 2020.
Claims priority of provisional application 62/783,627, filed on Dec. 21, 2018.
Claims priority of provisional application 62/891,672, filed on Aug. 26, 2019.
Claims priority of provisional application 62/892,019, filed on Aug. 27, 2019.
Prior Publication US 2022/0069243 A1, Mar. 3, 2022
Int. Cl. H10K 10/46 (2023.01); H10K 71/12 (2023.01); H10K 85/20 (2023.01)
CPC H10K 10/484 (2023.02) [H10K 71/12 (2023.02); H10K 85/221 (2023.02)] 23 Claims
OG exemplary drawing
 
1. A thin film transistor comprising:
a source electrode, a drain electrode and a gate electrode;
a semiconducting channel comprising a network of carbon nanotubes, the carbon nanotubes electrically coupled to the source electrode and drain electrode and electrically insulated from, but capacitively coupled to, the gate electrode; and
a polymeric layer encapsulating the carbon nanotubes, the polymeric layer comprising a first monomeric unit and optionally a second monomeric unit, wherein the first monomeric unit, the second monomeric unit and the relative amounts thereof are selected to provide at least one target electrical property of the thin film transistor,
wherein the polymeric layer has a thickness of greater than about 2 μm.