US 12,114,510 B2
SOT MRAM having dielectric interfacial layer and method forming same
Wilman Tsai, Saratoga, CA (US); MingYuan Song, Hsinchu (TW); and Shy-Jay Lin, Jhudong Township (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jun. 30, 2022, as Appl. No. 17/809,928.
Application 17/809,928 is a division of application No. 16/806,203, filed on Mar. 2, 2020, granted, now 11,469,267.
Claims priority of provisional application 62/849,322, filed on May 17, 2019.
Prior Publication US 2022/0328559 A1, Oct. 13, 2022
Int. Cl. H10B 61/00 (2023.01); G11C 11/16 (2006.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01)
CPC H10B 61/00 (2023.02) [G11C 11/161 (2013.01); H10N 50/01 (2023.02); H10N 50/80 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a dielectric seed layer having a crystalline structure;
a spin orbit coupling layer over the dielectric seed layer; and
a Magnetic Tunnel Junction (MTJ) stack comprising:
a dielectric layer over the spin orbit coupling layer;
a free layer over the dielectric layer;
a tunnel barrier layer over the free layer; and
a reference layer over the tunnel barrier layer, wherein the spin orbit coupling layer extends beyond edges of the MTJ stack in a first direction and a second direction opposite to the first direction.