US 12,114,492 B2
Memories having vertically stacked conductive filled structures
Jordan D. Greenlee, Boise, ID (US); John Mark Meldrim, Boise, ID (US); and Everett A. McTeer, Eagle, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Oct. 15, 2020, as Appl. No. 17/071,980.
Application 16/736,089 is a division of application No. 16/443,491, filed on Jun. 17, 2019, granted, now 10,559,579, issued on Feb. 11, 2020.
Application 16/186,042 is a division of application No. 15/848,398, filed on Dec. 20, 2017, granted, now 10,170,493, issued on Jan. 1, 2019.
Application 17/071,980 is a continuation of application No. 16/736,089, filed on Jan. 7, 2020, granted, now 10,840,255.
Application 16/443,491 is a continuation of application No. 16/186,042, filed on Nov. 9, 2018, granted, now 10,361,214, issued on Jul. 23, 2019.
Prior Publication US 2021/0066332 A1, Mar. 4, 2021
Int. Cl. H10B 43/27 (2023.01); H01L 21/285 (2006.01); H10B 41/27 (2023.01); H10B 43/10 (2023.01); H10B 41/10 (2023.01)
CPC H10B 41/27 (2023.02) [H01L 21/28562 (2013.01); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H01L 21/28518 (2013.01); H01L 21/28568 (2013.01); H10B 41/10 (2023.02)] 31 Claims
OG exemplary drawing
 
1. An assembly, comprising:
a stack of alternating first and second levels; the first levels comprising insulative material, and the second levels comprising conductive material;
channel structures extending through the stack;
the second levels comprising distal regions adjacent the channel structures and proximal regions spaced from the channel structures; and
the conductive material of the second levels comprising:
a conductive core in the distal and proximal regions; and
a liner of seed material surrounding at least a portion of the conductive core in at least one of the distal and proximal regions wherein the liner of seed material exists in the proximal regions, the liner of seed comprising a first composition and a second composition over the first composition, the first composition different from the second composition.