US 12,114,488 B2
Enhancing gapfill performance of dram word line
Yong Yang, Tengzhou (CN); Kunal Bhatnagar, Chandler, AZ (US); Srinivas Gandikota, Santa Clara, CA (US); Seshadri Ganguli, Sunnyvale, CA (US); Jose Alexandro Romero, Scottsdale, AZ (US); Mandyam Sriram, San Jose, CA (US); Mohith Verghese, Phoenix, AZ (US); Jacqueline S. Wrench, San Jose, CA (US); and Yixiong Yang, Fremont, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on May 5, 2021, as Appl. No. 17/308,577.
Prior Publication US 2022/0359532 A1, Nov. 10, 2022
Int. Cl. H10B 12/00 (2023.01); C23C 16/42 (2006.01); C23C 16/455 (2006.01)
CPC H10B 12/488 (2023.02) [C23C 16/42 (2013.01); C23C 16/45527 (2013.01); C23C 16/45553 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A method of forming a film, the method comprising:
forming a molybdenum-silicide film in a first process cycle comprising sequential exposure of a substrate to a molybdenum precursor, purge gas, a silane precursor, and purge gas, the substrate comprising a plurality of trenches with a gate oxide layer conformally deposited thereon and the molybdenum-silicide film formed in a bottom of the plurality of trenches on the gate oxide layer, the molybdenum precursor comprising one or more of molybdenum chloride (MoCl5), molybdenum fluoride (MoF6), molybdenum iodide (Mol6), molybdenum bromide (MoBr3), molybdenum hexacarbonyl (Mo(CO)6), molybdenum dichloride dioxide (MoO2Cl2), molybdenum oxytetrachloride (MoOCl4), Tetrakis(dimethylamino)molybdenum(IV), and Bis(tert-butylimido)-bis(dimethylamido)molybdenum; and
forming a soaked substrate having a titanium species thereon without forming a titanium nitride film in a second process cycle, the second process cycle consisting of flowing a titanium precursor in an atmosphere of argon (Ar) gas over the substrate, and purging the soaked substrate of unreacted titanium precursor, wherein the soaked substrate is formed prior to the first process cycle or wherein the soaked substrate is formed after the first process cycle.