CPC H10B 12/482 (2023.02) [H10B 12/30 (2023.02)] | 20 Claims |
1. A method of manufacturing a buried bit line structure, comprising:
providing an initial structure, the initial structure comprising a base and a protective layer provided on the base, and the base comprising active region structures and a dielectric layer, and a top surface of the active region structures is flush with a top surface of the dielectric layer;
forming an initial bit line trench in the initial structure, the initial bit line trench exposing the active region structures;
forming a conductive structure, the conductive structure being located at a bottom of the initial bit line trench and being at a preset distance from a bottom surface of the initial bit line trench;
forming a bit line contact structure, the bit line contact structure covering the conductive structure, and a top surface of the bit line contact structure being lower than the top surface of the active region structures; and
forming an insulation structure, the insulation structure covering the bit line contact structure, and a top surface of the insulation structure being flush with a top surface of the protective layer.
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